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| Shantou Huashan Electronic Devices Co.,Ltd. N PN S I L I C O N T R A N S I S T O R HED880 APPLICATIONS Low Frequency Power Amplifier. ABSOLUTE MAXIMUM RATINGS a=25ae(c) T T stg Storage Temperature---------- 55~150ae T j Junction Temperature-----------150ae PCCollector Dissipation c=25ae T (c)-------30W VCBO Collector-Base Voltage----------60V VCEO Collector-Emitter Voltage---------60V VEBO Emitter-Base Voltage-----------7V ICCollector Current----------3A ---Ib Current-----------Base - 0.3A -TO-220AB 1D Base B 2D Collector C 3D Emitter, E ELECTRICAL CHARACTERISTICS a=25ae(c) T Symbol Characteristics Collector-Emitter Breakdown Voltage Collector Cut-off Current Min 60 100 Typ Max Unit V Test Conditions BVCEO ICBO IEBO Emitter Cut-off Current 60 20 0.4 0.7 3 100 300 1 1 IC=50mA, I =0 B |I VCB=60V, IE=0 A |I VEB=7V, IC=0 A VCE=5V, IC=0.5A VCE=5V, IC=3A V V pF |I S |I S |I S IB1 = -IB2 =0.2A VCC=30V IC=3A, IB =0.3A VCE=5V, IC=0.5A VCB=10V, IE=0 f=1MHz HFE 1(c) DC Current Gain HFE 2(c) DC Current Gain VCE(sat) VBE(on) ft Cob tON tSTG tF Collector- Emitter Saturation Voltage Base-Emitter On Voltage Current Gain-Bandwidth Product MHz VCE =5V, IC=0.5A, Output Capacitance Turn-On Time Storage Time Fall Time 70 0.8 1.5 0.8 hFE Classification O 60 120 Y 100 200 150 GR 300 Shantou Huashan Electronic Devices Co.,Ltd. HED880 |
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